Steven R. Schofield
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Atomically precise placement of single dopants in Si
SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ...
Physical review letters 91 (13), 136104, 2003
Towards the fabrication of phosphorus qubits for a silicon quantum computer
JL O’Brien, SR Schofield, MY Simmons, R Clark, AS Dzurak, NJ Curson, ...
Physical Review B 64, 161401R, 2001
Toward atomic-scale device fabrication in silicon using scanning probe microscopy
FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
Quantum engineering at the silicon surface using dangling bonds
SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler
Nature communications 4 (1), 1649, 2013
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ...
Applied physics letters 81 (17), 3197-3199, 2002
Progress in silicon-based quantum computing
RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2003
Charge density waves in the graphene sheets of the superconductor CaC6
KC Rahnejat, CA Howard, NE Shuttleworth, SR Schofield, K Iwaya, ...
Nature communications 2 (1), 558, 2011
Thermal dissociation and desorption of PH3 on Si(001): A reinterpretation of spectroscopic data
HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ...
Physical Review B 74 (19), 195310, 2006
Phosphine dissociation on the Si(001) surface
HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical review letters 93 (22), 226102, 2004
Nondestructive imaging of atomically thin nanostructures buried in silicon
G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ...
Science advances 3 (6), e1602586, 2017
Scanning probe microscopy for silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures
O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical Review B 72 (12), 125328, 2005
STM characterization of the Si-P heterodimer
NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark
Physical Review B 69 (19), 195303, 2004
Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy
TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ...
ACS nano 14 (3), 3316-3327, 2020
Reaction paths of phosphine dissociation on silicon (001)
O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ...
The Journal of Chemical Physics 144 (1), 2016
Water on silicon (001): C defects and initial steps of surface oxidation
O Warschkow, SR Schofield, NA Marks, MW Radny, PV Smith, ...
Physical Review B 77 (20), 201305, 2008
Valence surface electronic states on Ge(001)
MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson
Physical review letters 100 (24), 246807, 2008
Phosphine dissociation and diffusion on Si(001) observed at the atomic scale
SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ...
The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006
Imaging charged defects on clean with scanning tunneling microscopy
GW Brown, H Grube, ME Hawley, SR Schofield, NJ Curson, MY Simmons, ...
Journal of applied physics 92 (2), 820-824, 2002
Towards the atomic-scale fabrication of a silicon-based solid state quantum computer
MY Simmons, SR Schofield, JL O’Brien, NJ Curson, L Oberbeck, T Hallam, ...
Surface science 532, 1209-1218, 2003
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