| Solar-energy conversion and light emission in an atomic monolayer p–n diode A Pospischil, MM Furchi, T Mueller Nature nanotechnology 9 (4), 257-261, 2014 | 1492 | 2014 |
| Photovoltaic effect in an electrically tunable van der Waals heterojunction MM Furchi, A Pospischil, F Libisch, J Burgdorfer, T Mueller Nano letters 14 (8), 4785-4791, 2014 | 1139 | 2014 |
| Microcavity-integrated graphene photodetector M Furchi, A Urich, A Pospischil, G Lilley, K Unterrainer, H Detz, P Klang, ... Nano letters 12 (6), 2773-2777, 2012 | 985 | 2012 |
| CMOS-compatible graphene photodetector covering all optical communication bands A Pospischil, M Humer, MM Furchi, D Bachmann, R Guider, T Fromherz, ... Nature Photonics 7 (11), 892-896, 2013 | 851 | 2013 |
| Mechanisms of Photoconductivity in Atomically Thin MoS2 MM Furchi, DK Polyushkin, A Pospischil, T Mueller Nano letters 14 (11), 6165-6170, 2014 | 705 | 2014 |
| Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride G Grosso, H Moon, B Lienhard, S Ali, DK Efetov, MM Furchi, ... Nature communications 8 (1), 705, 2017 | 555 | 2017 |
| A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits YQ Bie, G Grosso, M Heuck, MM Furchi, Y Cao, J Zheng, D Bunandar, ... Nature nanotechnology 12 (12), 1124-1129, 2017 | 447 | 2017 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 222 | 2016 |
| Optical imaging of strain in two-dimensional crystals L Mennel, MM Furchi, S Wachter, M Paur, DK Polyushkin, T Mueller Nature communications 9 (1), 516, 2018 | 200 | 2018 |
| Device physics of van der Waals heterojunction solar cells MM Furchi, F Höller, L Dobusch, DK Polyushkin, S Schuler, T Mueller npj 2D Materials and Applications 2 (1), 3, 2018 | 118 | 2018 |
| Photovoltaics in Van der Waals heterostructures MM Furchi, AA Zechmeister, F Hoeller, S Wachter, A Pospischil, T Mueller IEEE Journal of Selected Topics in Quantum Electronics 23 (1), 106-116, 2016 | 78 | 2016 |
| Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017 | 68 | 2017 |
| Silver nanoisland enhanced Raman interaction in graphene A Urich, A Pospischil, MM Furchi, D Dietze, K Unterrainer, T Mueller Applied Physics Letters 101 (15), 2012 | 65 | 2012 |
| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 61 | 2018 |
| Electric field modulation of thermovoltage in single-layer MoS2 L Dobusch, MM Furchi, A Pospischil, T Mueller, E Bertagnolli, A Lugstein Applied Physics Letters 105 (25), 2014 | 22 | 2014 |
| Reliability of next-generation field-effect transistors with transition metal dichalcogenides YY Illarionov, AJ Molina-Mendoza, M Waltl, T Knobloch, MM Furchi, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 5A. 5-1-5A. 5-6, 2018 | 6 | 2018 |
| Impact of gate dielectrics on the threshold voltage in MoS2 transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, D Polyushkin, A Pospischil, ... ECS Transactions 80 (1), 203, 2017 | 5 | 2017 |
| Physical modeling of the hysteresis in M0S2 transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, M Jech, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 284-287, 2017 | 4 | 2017 |
| 2D materials and heterostructures for applications in optoelectronics T Mueller, A Pospischil, MM Furchi Micro-and Nanotechnology Sensors, Systems, and Applications VII 9467, 163-168, 2015 | 4 | 2015 |
| Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators YY Illarionov, M Waltl, MM Furchi, T Mueller, T Grasser 2016 IEEE International Reliability Physics Symposium (IRPS), 5A-1-1-5A-1-6, 2016 | 3 | 2016 |
