Georges Bremond
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Excitonic photoluminescence from Si-capped strained layers
D Dutartre, G Brémond, A Souifi, T Benyattou
Physical Review B 44 (20), 11525, 1991
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001)
J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ...
Journal of applied physics 92 (1), 506-510, 2002
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
The acceptor level of vanadium in III–V compounds
B Clerjaud, C Naud, B Deveaud, B Lambert, B Plot, G Bremond, ...
Journal of applied physics 58 (11), 4207-4215, 1985
Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity
S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ...
The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013
Optical properties of silicon nanocrystal LEDs
J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
Influence of the chemical properties of the substrate on silicon quantum dot nucleation
F Mazen, T Baron, G Brémond, N Buffet, N Rochat, P Mur, MN Séméria
Journal of the Electrochemical Society 150 (3), G203, 2003
Deep level spectroscopy in InP: Fe
G Bremond, A Nouailhat, G Guillot, B Cockayne
Electronics Letters 17 (1), 55-56, 1981
Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001)
P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ...
Journal of applied physics 95 (3), 1074-1080, 2004
Controlling the structural properties of single step, dip coated ZnO seed layers for growing perfectly aligned nanowire arrays
S Guillemin, E Appert, H Roussel, B Doisneau, R Parize, T Boudou, ...
The Journal of Physical Chemistry C 119 (37), 21694-21703, 2015
Using silicon nanostructures for the improvement of silicon solar cells' efficiency
J De la Torre, G Bremond, M Lemiti, G Guillot, P Mur, N Buffet
Thin Solid Films 511, 163-166, 2006
Electrical and optical characterisation of vanadium in 4H and 6H–SiC
V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, ...
Materials Science and Engineering: B 61, 248-252, 1999
Characterization of semiconducting iron disilicide obtained by LRP/CVD
J Regolini, F Trincat, I Sagnes, Y Shapira, G Bremond, D Bensahel
IEEE transactions on electron devices 39 (1), 200-201, 1992
Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates
B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ...
Applied Physics Letters 79 (26), 4435-4437, 2001
Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001)
B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ...
Physical Review B 66 (19), 193305, 2002
Fe deep level optical spectroscopy in InP
G Bremond, A Nouailhat, G Guillot, B Cockayne
Solid State Communications 41 (6), 477-481, 1982
Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
G Bremond, A Souifi, T Benyattou, D Dutartre
Thin Solid Films 222 (1-2), 60-68, 1992
Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices
B Rezgui, A Sibai, T Nychyporuk, M Lemiti, G Brémond
Journal of Luminescence 129 (12), 1744-1746, 2009
Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection
P Fougeres, M Hage-Ali, JM Koebel, P Siffert, S Hassan, A Lusson, ...
Journal of crystal growth 184, 1313-1318, 1998
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