| Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness A Cao, X Zhang, B Koopmans, S Peng, Y Zhang, Z Wang, S Yan, H Yang, ... Nanoscale 10 (25), 12062-12067, 2018 | 95 | 2018 |
| Skyrmions in magnetic tunnel junctions X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ... ACS applied materials & interfaces 10 (19), 16887-16892, 2018 | 87 | 2018 |
| Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ... Materials 9 (1), 41, 2016 | 80 | 2016 |
| Magnetic tunnel junctions for spintronics: principles and applications S Peng, Y Zhang, M Wang, YG Zhang, W Zhao Wiley Encyclopedia of Electrical and Electronics Engineering, 1-16, 2014 | 63* | 2014 |
| Domain-Wall Motion Driven by Laplace Pressure in Nanodots with Perpendicular Anisotropy Y Zhang, X Zhang, N Vernier, Z Zhang, G Agnus, JR Coudevylle, X Lin, ... Physical Review Applied 9 (6), 064027, 2018 | 27 | 2018 |
| Demonstration of multi-state memory device combining resistive and magnetic switching behaviors Y Zhang, W Cai, W Kang, J Yang, E Deng, YG Zhang, W Zhao, ... IEEE Electron Device Letters 39 (5), 684-687, 2018 | 19 | 2018 |
| Heterogeneous memristive devices enabled by magnetic tunnel junction nanopillars surrounded by resistive silicon switches Y Zhang, X Lin, JP Adam, G Agnus, W Kang, W Cai, JR Coudevylle, ... Advanced Electronic Materials 4 (3), 1700461, 2018 | 17 | 2018 |
| High-speed, low-power, and error-free asynchronous write circuit for STT-MRAM and logic D Zhang, L Zeng, G Wang, Y Zhang, Y Zhang, JO Klein, W Zhao IEEE Transactions on Magnetics 52 (8), 1-4, 2016 | 16 | 2016 |
| A multilevel cell for STT-MRAM realized by capping layer adjustment M Wang, S Peng, Y Zhang, Y Zhang, Y Zhang, Q Zhang, D Ravelosona, ... IEEE Transactions on Magnetics 51 (11), 1-4, 2015 | 15 | 2015 |
| Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators J Wei, B Fang, W Wu, K Cao, HH Chen, Y Zhang, Z Zeng, H Wu, M Bai, ... Nanotechnology 31 (4), 045202, 2019 | 7 | 2019 |
| Tuning the linear field range of tunnel magnetoresistive sensor with MgO capping in perpendicular pinned double-interface CoFeB/MgO structure Z Cao, W Chen, S Lu, S Yan, Y Zhang, Z Zhou, Y Yang, Z Li, W Zhao, ... Applied Physics Letters 118 (12), 2021 | 6 | 2021 |
| Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM W Cai, K Cao, M Wang, S Peng, J Zhou, A Cao, B Zhang, L Wang, ... 2017 17th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2017 | 2 | 2017 |
| Design of a new voltage-controlled magnetic memory B Zhang, W Zhao, Y Zhang, Y Zhang 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 1 | 2014 |
| A Method of Making Same for Embedded Magnetic Tunnel Junction Device Comprising Dielectric Layer W Zhao, Y Zhang, M Wang CN Patent ZL201410072401.8, 2017 | | 2017 |
| A Magnetic Memory Device with Multi-level Cell based on Magnetic Field Assistance and Method of Making Same M Wang, Y Zhang, W Guo, W Zhao CN Patent ZL201410529868.0, 2017 | | 2017 |
| A Spin-orbit Torque Magnetoresistive Random Access Memory (SOT-MRAM) without External Magnetic Field B Zhang, W Guo, Y Zhang, W Zhao CN Patent ZL2014105317733.8, 2017 | | 2017 |
| An Information Sensing and Storage Device and Method of Making Same Y Zhang, W Zhao, M Wang, W Guo, YG Zhang CN Patent ZL201410341478.0, 2017 | | 2017 |
| A Magnetic Memory Based on Voltage Control Y Zhang, W Zhao, B Zhang, YG Zhang CN Patent ZL201410072318.0, 2016 | | 2016 |
| Spin transfer torque memories and logic gates M Wang, Y Zhang, X Zhang, JO Klein, C Chappert, W Zhao 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | | 2014 |
Weisheng ZhaoFert Beijing Institute, Beihang UniversityVerified email at buaa.edu.cn
