Quazi  D. M. Khosru
Quazi D. M. Khosru
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-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Applied Physics Letters 80 (7), 1252-1254, 2002
Effect of biomolecule position and fill in factor on sensitivity of a dielectric modulated double gate junctionless MOSFET biosensor
E Rahman, A Shadman, QDM Khosru
Sensing and Bio-Sensing Research 13, 49-54, 2017
High electron mobility transistors: performance analysis, research trend and applications
MNA Aadit, SG Kirtania, F Afrin, MK Alam, QDM Khosru
Different Types of Field-Effect Transistors-Theory and Applications, 45-64, 2017
Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/stack gate dielectrics
A Nakajima, QDM Khosru, T Yoshirnoto, T Kidera, S Yokoyama
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Monolayer MoS2 and WSe2 double gate field effect transistor as super nernst pH sensor and nanobiosensor
A Shadman, E Rahman, QDM Khosru
Sensing and Bio-Sensing Research 11, 45-51, 2016
Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi
Journal of applied physics 78 (5), 3252-3257, 1995
Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology
A Nakajima, QDM Khosru, T Yoshimoto, S Yokoyama
Microelectronics Reliability 42 (12), 1823-1835, 2002
Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 77 (9), 4494-4503, 1995
Spatial distribution of trapped holes in SiO2
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 76 (8), 4738-4742, 1994
Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO_2 Stack Gate Dielectrics
Technical Digest of the 2001 IEEE International Electron Devices Meeting …, 2001
Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current
N Chowdhury, SMF Azad, QDM Khosru
ECS Transactions 58 (16), 1, 2014
Trilayer TMDC heterostructures for MOSFETs and nanobiosensors
K Datta, A Shadman, E Rahman, QDM Khosru
Journal of Electronic Materials 46, 1248-1260, 2017
Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations
RN Sajjad, K Alam, QDM Khosru
Semiconductor science and technology 24 (4), 045023, 2009
Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection
QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Applied physics letters 63 (18), 2537-2539, 1993
Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics
T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal Of Alloys And Compounds 622, 471-476, 2015
A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor
E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru
Nanotechnology 29 (23), 235203, 2018
BaTiO3-Blue Phosphorus/WS2 hybrid structure-based surface plasmon resonance biosensor with enhanced sensor performance for rapid bacterial detection
KM Ishtiak, SA Imam, QDM Khosru
Results in Engineering 16, 100698, 2022
Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET
MH Bhuyan, QDM Khosru
International Journal of Electrical and Computer Engineering 5 (5), 310-315, 2010
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
FEM model of wraparound CNTFET with multi-CNT and its capacitance modeling
MRK Akanda, QDM Khosru
IEEE transactions on electron devices 60 (1), 97-102, 2012
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