Mahesh Neupane
Cited by
Cited by
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ...
ACS nano 8 (10), 10743-10755, 2014
Structure, properties and applications of two‐dimensional hexagonal boron nitride
S Roy, X Zhang, AB Puthirath, A Meiyazhagan, S Bhattacharyya, ...
Advanced Materials 33 (44), 2101589, 2021
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
YK Luo, J Xu, T Zhu, G Wu, EJ McCormick, W Zhan, MR Neupane, ...
Nano letters 17 (6), 3877-3883, 2017
Direct Bandgap Transition in Many‐Layer MoS2 by Plasma‐Induced Layer Decoupling
R Dhall, MR Neupane, D Wickramaratne, M Mecklenburg, Z Li, C Moore, ...
Advanced Materials 27 (9), 1573-1578, 2015
Raman spectra of twisted CVD bilayer graphene
P Ramnani, MR Neupane, S Ge, AA Balandin, RK Lake, A Mulchandani
Carbon 123, 302-306, 2017
Exciton condensate in bilayer transition metal dichalcogenides: Strong coupling regime
B Debnath, Y Barlas, D Wickramaratne, MR Neupane, RK Lake
Physical Review B 96 (17), 174504, 2017
Stacking order dependent mechanical properties of graphene/MoS2 bilayer and trilayer heterostructures
RM Elder, MR Neupane, TL Chantawansri
Applied Physics Letters 107 (7), 2015
MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials
T Pham, P Ramnani, CC Villarreal, J Lopez, P Das, I Lee, MR Neupane, ...
Carbon 142, 504-512, 2019
Commensurate lattice constant dependent thermal conductivity of misoriented bilayer graphene
C Li, B Debnath, X Tan, S Su, K Xu, S Ge, MR Neupane, RK Lake
Carbon 138, 451-457, 2018
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS2
CN Eads, D Bandak, MR Neupane, D Nordlund, OLA Monti
Nature Communications 8 (1), 1369, 2017
The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite
KM Habib, SS Sylvia, S Ge, M Neupane, RK Lake
Applied Physics Letters 103 (24), 2013
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length
KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ...
IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020
Synthesis of Atomically Thin MoS2 Triangles and Hexagrams and their Electrical Transport Properties
R Ionescu, W Wang, Y Chai, Z Mutlu, I Ruiz, Z Favors, D Wickramaratne, ...
IEEE Transactions on Nanotechnology, 1-1, 2014
Systematic comparison of various oxidation treatments on diamond surface
C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ...
Carbon 182, 725-734, 2021
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN
D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ...
2D Materials 5 (4), 045016, 2018
Effect of random, discrete source dopant distributions on nanowire tunnel FETs
SS Sylvia, KMM Habib, MA Khayer, K Alam, M Neupane, RK Lake
IEEE Transactions on Electron Devices 61 (6), 2208-2214, 2014
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures
PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ...
Applied Physics Letters 117 (12), 2020
Two Step Growth Phenomena of Molybdenum Disulfide –Tungsten Disulfide Heterostructures
MOCSO Robert Ionescu, Isaac Ruiz, Zachary Favors, Brennan Campbell, Mahesh ...
Chem. Commun., 2015
Cross‐Plane Carrier Transport in Van der Waals Layered Materials
S Najmaei, MR Neupane, BM Nichols, RA Burke, AL Mazzoni, ML Chin, ...
Small 14 (20), 1703808, 2018
The system can't perform the operation now. Try again later.
Articles 1–20