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Tomaš Stankevič
Tomaš Stankevič
Microsoft Quantum
Verified email at microsoft.com
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Year
Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
J Shabani, M Kjærgaard, HJ Suominen, Y Kim, F Nichele, K Pakrouski, ...
Physical Review B 93 (15), 155402, 2016
347*2016
InAs-Al hybrid devices passing the topological gap protocol
M Aghaee, A Akkala, Z Alam, R Ali, A Alcaraz Ramirez, M Andrzejczuk, ...
Physical Review B 107 (24), 245423, 2023
1492023
Field effect enhancement in buffered quantum nanowire networks
F Krizek, JE Sestoft, P Aseev, S Marti-Sanchez, S Vaitiekėnas, L Casparis, ...
Physical review materials 2 (9), 093401, 2018
1072018
Web-based biometric computer mouse advisory system to analyze a user's emotions and work productivity
A Kaklauskas, EK Zavadskas, M Seniut, G Dzemyda, V Stankevic, ...
Engineering Applications of Artificial Intelligence 24 (6), 928-945, 2011
882011
Pulsed magnetic field measurement system based on colossal magnetoresistance-B-scalar sensors for railgun investigation
T Stankevič, L Medišauskas, V Stankevič, S Balevičius, N Žurauskienė, ...
Review of Scientific Instruments 85 (4), 2014
562014
NanoMAX: the hard X-ray nanoprobe beamline at the MAX IV Laboratory
U Johansson, D Carbone, S Kalbfleisch, A Björling, M Kahnt, S Sala, ...
Journal of Synchrotron Radiation 28 (6), 1935-1947, 2021
522021
Recommender system to analyze student’s academic performance
A Kaklauskas, EK Zavadskas, M Seniut, V Stankevic, J Raistenskis, ...
Expert Systems with Applications 40 (15), 6150-6165, 2013
422013
Structural properties of wurtzite InP–InGaAs nanowire core–shell heterostructures
M Heurlin, T Stankevic, S Mickevicius, S Yngman, D Lindgren, ...
Nano Letters 15 (4), 2462-2467, 2015
412015
Coherent epitaxial semiconductor–ferromagnetic insulator InAs/EuS interfaces: Band alignment and magnetic structure
Y Liu, A Luchini, S Martí-Sánchez, C Koch, S Schuwalow, SA Khan, ...
ACS applied materials & interfaces 12 (7), 8780-8787, 2019
362019
Bragg coherent x-ray diffractive imaging of a single indium phosphide nanowire
D Dzhigaev, A Shabalin, T Stankevič, U Lorenz, RP Kurta, F Seiboth, ...
Journal of Optics 18 (6), 064007, 2016
362016
X-ray Bragg ptychography on a single InGaN/GaN core–shell nanowire
D Dzhigaev, T Stankevič, Z Bi, S Lazarev, M Rose, A Shabalin, ...
ACS nano 11 (7), 6605-6611, 2017
322017
Fast strain mapping of nanowire light-emitting diodes using nanofocused x-ray beams
T Stankeviˇc, E Hilner, F Seiboth, R Ciechonski, G Vescovi, O Kryliouk, ...
ACS nano 9 (7), 6978-6984, 2015
322015
Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam
T Stankevič, D Dzhigaev, Z Bi, M Rose, A Shabalin, J Reinhardt, ...
Applied Physics Letters 107 (10), 2015
282015
Magnetic diffusion inside the rails of an electromagnetic launcher: Experimental and numerical studies
T Stankevič, M Schneider, S Balevičius
IEEE Transactions on Plasma Science 41 (10), 2790-2795, 2013
262013
Measurement of strain in InGaN/GaN nanowires and nanopyramids
T Stankevič, S Mickevičius, M Schou Nielsen, O Kryliouk, R Ciechonski, ...
Journal of Applied Crystallography 48 (2), 344-349, 2015
252015
Design and performance of a dedicated coherent X-ray scanning diffraction instrument at beamline NanoMAX of MAX IV
D Carbone, S Kalbfleisch, U Johansson, A Björling, M Kahnt, S Sala, ...
Synchrotron Radiation 29 (3), 876-887, 2022
232022
Velocity-induced current profiles inside the rails of an electric launcher
O Liebfried, M Schneider, T Stankevič, S Balevičius, N Žurauskienė
IEEE Transactions on Plasma Science 41 (5), 1520-1525, 2013
212013
Self-assembled InN quantum dots on side facets of GaN nanowires
Z Bi, M Ek, T Stankevic, J Colvin, M Hjort, D Lindgren, F Lenrick, ...
Journal of Applied Physics 123 (16), 2018
162018
Ptychographical imaging of the phase vortices in the x-ray beam formed by nanofocusing lenses
D Dzhigaev, U Lorenz, RP Kurta, F Seiboth, T Stankevic, S Mickevicius, ...
Journal of Physics: Conference Series 499 (1), 012020, 2014
142014
Doubling the mobility of InAs/InGaAs selective area grown nanowires
DV Beznasyuk, S Martí-Sánchez, JH Kang, R Tanta, M Rajpalke, ...
Physical Review Materials 6 (3), 034602, 2022
13*2022
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