Tony Ivanov
Tony Ivanov
US Army Research Laboratory
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Structure, properties and applications of two‐dimensional hexagonal boron nitride
S Roy, X Zhang, AB Puthirath, A Meiyazhagan, S Bhattacharyya, ...
Advanced Materials 33 (44), 2101589, 2021
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
PZT‐based piezoelectric MEMS technology
GL Smith, JS Pulskamp, LM Sanchez, DM Potrepka, RM Proie, TG Ivanov, ...
Journal of the American Ceramic Society 95 (6), 1777-1792, 2012
Piezoelectric PZT MEMS technologies for small-scale robotics and RF applications
JS Pulskamp, RG Polcawich, RQ Rudy, SS Bedair, RM Proie, T Ivanov, ...
MRS bulletin 37 (11), 1062-1070, 2012
Integrated power devices and signal isolation structure
J Costa, T Ivanov, M Carroll
US Patent 7,135,766, 2006
Integrated MEMS switch technology on SOI-CMOS
J Costa, T Ivanov, J Hammond, J Gering, E Glass, J Jorgenson, D Dening, ...
Proceedings of Hilton Head Workshop: A Solid-State Sensors, Actuators and …, 2008
Silicon RFCMOS SOI technology with above-IC MEMS integration for front end wireless applications
J Costa, T Ivanov, M Carroll, J Hammond, E Glass, J Jorgenson, ...
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 204-207, 2008
Thermally stable, high performance transfer doping of diamond using transition metal oxides
KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ...
Scientific Reports 8 (1), 3342, 2018
Development of a PZT MEMS switch architecture for low-power digital applications
RM Proie, RG Polcawich, JS Pulskamp, T Ivanov, ME Zaghloul
Journal of Microelectromechanical Systems 20 (4), 1032-1042, 2011
A silicon RFCMOS SOI technology for integrated cellular/WLAN RF TX modules
J Costa, M Carroll, J Jorgenson, T McKay, T Ivanov, T Dinh, D Kozuch, ...
2007 IEEE/MTT-S International Microwave Symposium, 445-448, 2007
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ...
Nanoscale 10 (1), 336-341, 2018
Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process
CA King, MR Frei, M Mastrapasqua, KK Ng, YO Kim, RW Johnson, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Inline ground-signal-ground (GSG) RF tester
TG Ivanov, MS Carroll
US Patent 6,194,739, 2001
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
Demonstration of diamond nuclear spin gyroscope
A Jarmola, S Lourette, VM Acosta, AG Birdwell, P Blümler, D Budker, ...
Science advances 7 (43), eabl3840, 2021
Integration of high-Q inductors in a latch-up resistant CMOS technology
MR Frei, NR Belk, DC Dennis, MS Carroll, W Lin, MR Pinto, VD Archer, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Resistor fuse
MS Carroll, FY Hui, TG Ivanov
US Patent 6,356,496, 2002
p-Diamond as candidate for plasmonic terahertz and far infrared applications
M Shur, S Rudin, G Rupper, T Ivanov
Applied Physics Letters 113 (25), 2018
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length
KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ...
IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020
Systematic comparison of various oxidation treatments on diamond surface
C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ...
Carbon 182, 725-734, 2021
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