Frank Tseng
Frank Tseng
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Graphene nanoelectronics: Metrology, synthesis, properties and applications
H Raza
Springer Science & Business Media, 2012
Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible
B Mukherjee, F Tseng, D Gunlycke, KK Amara, G Eda, E Simsek
Optical Materials Express 5 (2), 447-455, 2015
Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors
F Tseng, D Unluer, K Holcomb, MR Stan, AW Ghosh
Applied Physics Letters 94 (22), 2009
Graphene devices, interconnect and circuits—challenges and opportunities
MR Stan, D Unluer, A Ghosh, F Tseng
2009 IEEE International Symposium on Circuits and Systems, 69-72, 2009
Monolithically patterned wide–narrow–wide all-graphene devices
D Unluer, F Tseng, AW Ghosh, MR Stan
IEEE transactions on nanotechnology 10 (5), 931-939, 2010
Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene
RN Sajjad, F Tseng, KMM Habib, AW Ghosh
Physical Review B 92 (20), 205408, 2015
Graphene nanoribbons: from chemistry to circuits
F Tseng, D Unluer, MR Stan, AW Ghosh
Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications …, 2012
Triangular lattice exciton model
D Gunlycke, F Tseng
Physical Chemistry Chemical Physics 18 (12), 8579-8586, 2016
Using dark states for exciton storage in transition-metal dichalcogenides
F Tseng, E Simsek, D Gunlycke
Journal of Physics: Condensed Matter 28 (3), 034005, 2015
Physics-based GNRFET compact model for digital circuit design
D Unluer, F Tseng, AW Ghosh
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
Atomistic deconstruction of clear performance advantages of a monolithically patterned wide-narrow-wide all-graphene FET
D Unluer, F Tseng, AW Ghosh, MR Stan, CL Brown
2009 Device Research Conference, 75-76, 2009
From low-bias mobility to high-bias current saturation: fundamental trade-offs in graphene based transistors
F Tseng, AW Ghosh
arXiv preprint arXiv:1003.4551, 2010
Conductance of graphene: Role of metal contact, charge puddles and differential gating
RN Sajjad, F Tseng, AW Ghosh
72nd Device Research Conference, 77-78, 2014
Switching limits in nano-electronic devices
L Li, D Unluer, M Kabir, F Tseng, MR Stan, AW Ghosh
10th IEEE International Conference on Nanotechnology, 15-20, 2010
Storing excitons in transition-metal dichalcogenides using dark states
D Gunlycke, F Tseng, E Simsek
APS March Meeting Abstracts 2016, S17. 009, 2016
Theory and applications of strongly bound excitons in layered transition-metal dichalcogenides
F Tseng, D Gunlycke, E Simsek
2015 IEEE Photonics Conference (IPC), 188-189, 2015
Exciton physics in transition-metal dichalcogenides at the atomic scale
F Tseng, E Smisek, D Gunlycke
Integrated Photonics Research, Silicon and Nanophotonics, IM4A. 6, 2015
Atomistic model for excitons: Capturing Strongly Bound Excitons in Monolayer Transition-Metal Dichalcogenides
F Tseng, E Simsek, D Gunlycke
APS March Meeting Abstracts 2015, T2. 005, 2015
Tunneling through graphene and topological insulators in presence of pn junction: transport properties and device prospects
R Sajjad, KM Habib, F Tseng, A Ghosh
APS March Meeting Abstracts 2014, L29. 006, 2014
Can we engineer current saturation in narrow gap graphitic FETs without hurting mobility?
F Tseng, G Fiori, AW Ghosh
71st Device Research Conference, 1-2, 2013
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