Alan Seabaugh
Alan Seabaugh
Professor of Electrical Engineering, University of Notre Dame
Verified email at - Homepage
Cited by
Cited by
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
Low-voltage tunnel transistors for beyond CMOS logic
AC Seabaugh, Q Zhang
Proceedings of the IEEE 98 (12), 2095-2110, 2010
Low-subthreshold-swing tunnel transistors
Q Zhang, W Zhao, A Seabaugh
IEEE Electron Device Letters 27 (4), 297-300, 2006
Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh
IEEE Journal of the Electron Devices Society 2 (4), 44-49, 2014
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ...
Applied Physics Letters 104 (20), 2014
Direct extraction of the electron tunneling effective mass in ultrathin SiO2
B Brar, GD Wilk, AC Seabaugh
Applied physics letters 69 (18), 2728-2730, 1996
Device and architecture outlook for beyond CMOS switches
K Bernstein, RK Cavin, W Porod, A Seabaugh, J Welser
Proceedings of the IEEE 98 (12), 2169-2184, 2010
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied physics letters 101 (1), 2012
Graphene nanoribbon tunnel transistors
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
TPE Broekaert, B Brar, JPA van der Wagt, AC Seabaugh, FJ Morris, ...
IEEE Journal of Solid-State Circuits 33 (9), 1342-1349, 1998
RTD/HFET low standby power SRAM gain cell
JPA Van Der Wagt, AC Seabaugh, EA Beam
IEEE Electron Device Letters 19 (1), 7-9, 1998
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 2012
Nanomechanical switches and circuits
GA Frazier, AC Seabaugh
US Patent 6,548,841, 2003
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 2014
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
Silicon oxide resonant tunneling diode structure
RM Wallace, AC Seabaugh
US Patent 5,606,177, 1997
Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh
Applied physics letters 54 (11), 1034-1036, 1989
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
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