Dr. Bablu Mukherjee

Cited by

	All	Since 2019
Citations	1181	835
h-index	17	14
i10-index	20	18

180

135

20132014201520162017201820192020202120222023202416 19 27 83 82 114 127 121 133 163 149 142

Public access

View all

10 articles

0 articles

available

not available

Based on funding mandates

Co-authors

Chorng Haur SowProfessor of Physics, National University of SingaporeVerified email at nus.edu.sg
Ergun SimsekAssistant Professor of CSEE and Director of Graduate Data Science Programs at UMBCVerified email at umbc.edu
Yutaka WakayamaNational Institute for Materials ScienceVerified email at nims.go.jp
Amir ZulkefliStaff Engineer at Infineon Technologies | Reliability EngineeringVerified email at infineon.com
Saurabh LodhaProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
Naveen kaushikMicron TechnologyVerified email at micron.com
Kartikey ThakarProcess Development Engineer, Texas Instruments IndiaVerified email at ti.com
T.TaniguchiNational Institute for Materials ScienceVerified email at nims.go.jp
Goki EdaNational University of SingaporeVerified email at nus.edu.sg
G.V. Pavan KumarProfessor of Physics, Indian Institute of Science Education and Research, PuneVerified email at iiserpune.ac.in
René H.J. VervuurtASMVerified email at asm.com
JTL ThongProfessor, Singapore Institute of TechnologyVerified email at SingaporeTech.edu.sg
TokesAssociate Professor, National University of SingaporeVerified email at nus.edu.sg

Dr. Bablu Mukherjee

Micron Technology | NAND Design Rule

Verified email at micron.com - Homepage

2D Semiconductor CMOS Device Physics Advanced Technology CMOS/Array Process Interface NAND Memory


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet B Mukherjee, YQ Cai, HR Tan, YP Feng, ES Tok, CH Sow ACS APPLIED MATERIALS & INTERFACES 5 (19), 9594-9604, 2013	254	2013
Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible B Mukherjee, F Tseng, D Gunlycke, KK Amara, G Eda, E Simsek Optical Materials Express 5 (2), 447-455, 2015	146	2015
Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ... npj 2D Materials and Applications 1 (1), 34, 2017	107	2017
Multilayer ReS₂ Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha ACS applied materials & interfaces 10 (42), 36512-36522, 2018	101	2018
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS₂/h‐BN/Graphene Heterostructures B Mukherjee, A Zulkefli, K Watanabe, T Taniguchi, Y Wakayama, ... Advanced Functional Materials 30 (42), 2001688, 2020	65	2020
Exciton Emission Intensity Modulation of Monolayer MoS₂ via Au Plasmon Coupling B Mukherjee, N Kaushik, RPN Tripathi, AM Joseph, PK Mohapatra, ... Scientific reports 7 (1), 41175, 2017	61	2017
Electrical and photoresponse properties of Co3O4 nanowires B Varghese, B Mukherjee, KRG Karthik, KB Jinesh, SG Mhaisalkar, ... Journal of Applied Physics 111 (10), 104306-104306-6, 2012	58	2012
Utilization of monolayer MoS2 in Bragg stacks and metamaterial structures as broadband absorbers B Mukherjee, E Simsek Optics Communications 369, 89–93, 2016	35	2016
Cation exchange synthesis of uniform PbSe/PbS core/shell tetra-pods and their use as near-infrared photodetectors N Mishra, B Mukherjee, G Xing, S Chakrabortty, A Guchhait, JY Lim Nanoscale 8 (29), 14203-14212, 2016	35	2016
Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS₂/p-Si Heterojunction Photodiodes B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai ACS Photonics 6 (9), 2277-2286, 2019	32	2019
Stepped-surfaced GeSe2 Nanobelts with High-gain Photoconductivity B Mukherjee, Z Hu, M Zheng, Y Cai, YP Feng, ES TOK, CH Sow Journal of Materials Chemistry, 2012	32	2012
Plasmonics Enhanced Average Broadband Absorption of Monolayer MoS₂ B Mukherjee, E Simsek Plasmonics 11, 285-289, 2016	31	2016
Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects B Mukherjee, ES Tok, CH Sow Journal of Applied Physics 114 (13), 2013	31	2013
Raman analysis of gold on WSe2 single crystal film B Mukherjee, WS Leong, Y Li, H Gong, L Sun, ZX Shen, E Simsek, ... Materials Research Express 2 (6), 065009, 2015	28	2015
K-Enriched WO₃ Nanobundles: High Electrical Conductivity and Photocurrent with Controlled Polarity Z Hu, Z Ji, WW Lim, B Mukherjee, C Zhou, ES Tok, CH Sow ACS Applied Materials & Interfaces 5 (11), 4731-4738, 2013	26	2013
ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory B Mukherjee, R Hayakawa, K Watanabe, T Taniguchi, S Nakaharai, ... Advanced Electronic Materials 7 (1), 2000925, 2021	25	2021
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS₂-FETs under Light-Assisted and Gate-Bias Tunable Operation A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, Y Wakayama, ... ACS Applied Materials & Interfaces 13 (36), 43030-43038, 2021	24	2021
Direct laser micropatterning of GeSe2 nanostructures film with controlled optoelectrical properties B Mukherjee, G Murali, SX Lim, M Zheng, ES Tok, CH Sow RSC Advances 4 (20), 10013-10021, 2014	15	2014
Visibility of atomically-thin layered materials buried in silicon dioxide E Simsek, B Mukherjee Nanotechnology 26, 455701, 2015	14	2015
Synthesis, characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays B Mukherjee, B Varghese, M Zheng, KRG Karthik, N Mathews, ... Journal of Crystal Growth 346 (1), 32-39, 2012	14	2012

The system can't perform the operation now. Try again later.

Articles 1–20

Citations per year

Duplicate citations

Merged citations

Add co-authorsCo-authors

Follow

Cited by

Co-authors