Martin S. Brandt
Martin S. Brandt
apl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität München
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Cited by
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The origin of visible luminescencefrom “porous silicon”: A new interpretation
MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona
Solid State Communications 81 (4), 307-312, 1992
Black nonreflecting silicon surfaces for solar cells
S Koynov, MS Brandt, M Stutzmann
Applied Physics Letters 88 (20), 203107, 2006
Structural and doping effects in the half-metallic double perovskite A 2 CrWO 6 (A= Sr, Ba, and Ca)
JB Philipp, P Majewski, L Alff, A Erb, R Gross, T Graf, MS Brandt, J Simon, ...
Physical Review B 68 (14), 144431, 2003
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Elastically driven ferromagnetic resonance in nickel thin films
M Weiler, L Dreher, C Heeg, H Huebl, R Gross, MS Brandt, ...
Physical review letters 106 (11), 117601, 2011
Acoustically driven ferromagnetic resonance
M Weiler, L Dreher, C Heeg, H Huebl, R Gross, MS Brandt, ...
arXiv preprint arXiv:1009.5798, 2010
Surface acoustic wave driven ferromagnetic resonance in nickel thin films: Theory and experiment
L Dreher, M Weiler, M Pernpeintner, H Huebl, R Gross, MS Brandt, ...
Physical Review B 86 (13), 134415, 2012
Scaling behavior of the spin pumping effect in ferromagnet-platinum bilayers
FD Czeschka, L Dreher, MS Brandt, M Weiler, M Althammer, IM Imort, ...
Physical review letters 107 (4), 046601, 2011
The Mn 3+/2+ acceptor level in group III nitrides
T Graf, M Gjukic, MS Brandt, M Stutzmann, O Ambacher
Applied Physics Letters 81 (27), 5159-5161, 2002
Porous silicon and siloxene: Vibrational and structural properties
HD Fuchs, M Stutzmann, MS Brandt, M Rosenbauer, J Weber, ...
Physical Review B 48 (11), 8172, 1993
Method of separating two layers of material from one another and electronic components produced using this process
M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh
US Patent 6,559,075, 2003
Siloxene: Chemical quantum confinement due to oxygen in a silicon matrix
P Deák, M Rosenbauer, M Stutzmann, J Weber, MS Brandt
Physical review letters 69 (17), 2531, 1992
Hydrogenation of p‐type gallium nitride
MS Brandt, NM Johnson, RJ Molnar, R Singh, TD Moustakas
Applied physics letters 64 (17), 2264-2266, 1994
Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature
M Weiler, A Brandlmaier, S Geprägs, M Althammer, M Opel, C Bihler, ...
New Journal of Physics 11 (1), 013021, 2009
Electrical detection of coherent 31P spin quantum states
AR Stegner, C Boehme, H Huebl, M Stutzmann, K Lips, MS Brandt
Nature Physics 2 (12), 835-838, 2006
Direct biofunctionalization of semiconductors: A survey
M Stutzmann, JA Garrido, M Eickhoff, MS Brandt
physica status solidi (a) 203 (14), 3424-3437, 2006
Electronic transport in phosphorus-doped silicon nanocrystal networks
AR Stegner, RN Pereira, K Klein, R Lechner, R Dietmueller, MS Brandt, ...
Physical review letters 100 (2), 026803, 2008
DX-behavior of Si in AlN
R Zeisel, MW Bayerl, STB Goennenwein, R Dimitrov, O Ambacher, ...
Physical Review B 61 (24), R16283, 2000
Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix
C Bihler, C Jaeger, T Vallaitis, M Gjukic, MS Brandt, E Pippel, ...
Applied Physics Letters 88 (11), 112506-112506, 2006
Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
AR Stegner, RN Pereira, R Lechner, K Klein, H Wiggers, M Stutzmann, ...
Physical Review B 80 (16), 165326, 2009
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