Gerhard Klimeck
Gerhard Klimeck
Professor of Electrical and Computer Engineering, Purdue University
Verified email at - Homepage
Cited by
Cited by
Silicon quantum electronics
FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ...
Reviews of modern physics 85 (3), 961, 2013
A single-atom transistor
M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ...
Nature nanotechnology 7 (4), 242-246, 2012
Single and multiband modeling of quantum electron transport through layered semiconductor devices
R Lake, G Klimeck, RC Bowen, D Jovanovic
Journal of Applied Physics 81 (12), 7845-7869, 1997
Valence band effective-mass expressions in the sp 3 d 5 s* empirical tight-binding model applied to a Si and Ge parametrization
TB Boykin, G Klimeck, F Oyafuso
Physical Review B 69 (11), 115201, 2004
Atomistic simulation of nanowires in the s p 3 d 5 s* tight-binding formalism: From boundary conditions to strain calculations
M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B 74 (20), 205323, 2006
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ...
Nature Physics 4 (8), 656-661, 2008
Ohm’s law survives to the atomic scale
B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ...
Science 335 (6064), 64-67, 2012
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ...
Nature communications 4 (1), 2069, 2013
Computational Electronics: semiclassical and quantum device modeling and simulation
D Vasileska, SM Goodnick, G Klimeck
CRC press, 2017
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
TB Boykin, G Klimeck, RC Bowen, F Oyafuso
Physical Review B 66 (12), 125207, 2002
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
S Lee, F Oyafuso, P Von Allmen, G Klimeck
Physical Review B 69 (4), 045316, 2004
nanohub. org: Advancing education and research in nanotechnology
G Klimeck, M McLennan, SP Brophy, GB Adams III, MS Lundstrom
Computing in Science & Engineering 10 (5), 17-23, 2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks
G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ...
IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
M Luisier, G Klimeck
Physical Review B 80 (15), 155430, 2009
Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots
G Klimeck, F Oyafuso, TB Boykin, RC Bowen, P von Allmen
Electronic properties of silicon nanowires
Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck
IEEE transactions on electron devices 52 (6), 1097-1103, 2005
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
NEMO5: A parallel multiscale nanoelectronics modeling tool
S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck
IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
M Luisier, G Klimeck
Journal of Applied Physics 107 (8), 2010
Valley splitting in strained silicon quantum wells
TB Boykin, G Klimeck, MA Eriksson, M Friesen, SN Coppersmith, ...
Applied Physics Letters 84 (1), 115-117, 2004
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